- FET Feature：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Operating Temperature：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
- Vgs(th) (Max) @ Id：
-
11 Datensätze
| Bild | Teil | Hersteller | Beschreibung | Lagerbestand | Aktion | |
|---|---|---|---|---|---|---|
|
Infineon Technologies | MOSFET 2N-CH 20V 6.6... |
15,017
In-stock
|
Jetzt kaufen Angebot einholen | ||
|
|
International Rectifier | HEXFET POWER MOS... |
35,000
In-stock
|
Jetzt kaufen Angebot einholen | ||
|
|
Infineon Technologies | MOSFET 2N-CH 20V 6.6... |
35,000
In-stock
|
Angebot einholen | ||
|
|
Diodes Incorporated | MOSFET 2N-CH 20V 8-S... |
35,000
In-stock
|
Angebot einholen | ||
|
|
onsemi | MOSFET 2N-CH 20V 6.6... |
35,000
In-stock
|
Jetzt kaufen Angebot einholen | ||
|
|
Infineon Technologies | MOSFET 2N-CH 20V 6.6... |
35,000
In-stock
|
Angebot einholen | ||
|
|
Infineon Technologies | MOSFET 2N-CH 30V 6.6... |
35,000
In-stock
|
Jetzt kaufen Angebot einholen | ||
|
|
Vishay | MOSFET 2N-CH 30V 6.6... |
35,000
In-stock
|
Angebot einholen | ||
|
|
Vishay | MOSFET 2N-CH 40V 6.6... |
35,000
In-stock
|
Angebot einholen | ||
|
|
Vishay | MOSFET 2N-CH 40V 6.6... |
35,000
In-stock
|
Angebot einholen | ||
|
|
Vishay | MOSFET 2N-CH 30V 6.6... |
35,000
In-stock
|
Angebot einholen |
