- Current - Continuous Drain (Id) @ 25°C:
-
- Drain to Source Voltage (Vdss):
-
- FET Feature:
-
- FET Type:
-
- Gate Charge (Qg) (Max) @ Vgs:
-
- Input Capacitance (Ciss) (Max) @ Vds:
-
- Mounting Type:
-
- Operating Temperature:
-
- Package / Case:
-
- Power - Max:
-
- Rds On (Max) @ Id, Vgs:
-
- Supplier Device Package:
-
- Vgs(th) (Max) @ Id:
-
65 Records
Image | Part | Manufacturer | Description | Stock | Action | |
---|---|---|---|---|---|---|
PANJIT | 20V P-CHANNEL ENHA... |
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PANJIT | 30V DUAL N-CHANNEL... |
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Infineon Technologies | LOW POWER EASY AG... |
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EPC | GAN TRANS 2N-CH 100... |
35,000
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EPC | GANFET TRANS SYM... |
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EPC | GANFET 2NCH 100V 23A... |
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EPC | GANFET 2NCH 80V 9.5A... |
35,000
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EPC | GAN TRANS ASYMME... |
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EPC | GANFET 2 N-CHANNE... |
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Diodes Incorporated | MOSFET 2N-CH 60V 0.2... |
35,000
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Diodes Incorporated | MOSFET 2N-CH 50V 0.2... |
35,000
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Infineon Technologies | MOSFET 2N-CH 20V 6.5... |
35,000
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Diodes Incorporated | MOSFET N/P-CH 60V/5... |
35,000
In-stock
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Infineon Technologies | MOSFET 2N-CH 20V 5.4... |
35,000
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Infineon Technologies | MOSFET 2N-CH 80V 3.6... |
35,000
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Infineon Technologies | MOSFET 2P-CH 20V 9A... |
35,000
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Infineon Technologies | MOSFET 2N-CH 12V 10A... |
35,000
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Infineon Technologies | MOSFET 2N-CH 20V 3.5... |
35,000
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Infineon Technologies | MOSFET 2N-CH 50V 3A... |
35,000
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Infineon Technologies | MOSFET 2P-CH 20V 2.3... |
35,000
In-stock
|
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