Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
Drive Voltage (Max Rds On, Min Rds On):
FET Type:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Operating Temperature:
Power Dissipation (Max):
Supplier Device Package:
Vgs (Max):
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Stock Action
TSM650P03CX RFG Taiwan Semiconductor
MOSFET P-CHANNEL...
RFQ
10,795
In-stock
Buy Now Get Quote
TSM650N15CS RLG Taiwan Semiconductor
MOSFET N-CHANNEL...
RFQ
35,000
In-stock
Buy Now Get Quote
TSM650N15CR RLG Taiwan Semiconductor
MOSFET N-CH 150V 24A...
RFQ
35,000
In-stock
Buy Now Get Quote
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