DMN2019UTS-13

Mfr.Part #
DMN2019UTS-13
Manufacturer
Diodes Incorporated
Package/Case
-
Datasheet
Download
Description
MOSFET 2N-CH 20V 5.4A TSSOP-8
Stock
35000

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Arrays
Current - Continuous Drain (Id) @ 25°C :
5.4A
Drain to Source Voltage (Vdss) :
20V
FET Feature :
Logic Level Gate
FET Type :
2 N-Channel (Dual) Common Drain
Gate Charge (Qg) (Max) @ Vgs :
8.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
143pF @ 10V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Power - Max :
780mW
Product Status :
Active
Rds On (Max) @ Id, Vgs :
18.5mOhm @ 7A, 10V
Supplier Device Package :
8-TSSOP
Vgs(th) (Max) @ Id :
950mV @ 250µA
Datasheets
DMN2019UTS-13

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Flexible logistics solutions, including express, air, and sea freight. Strong partnerships with reliable suppliers for a stable supply chain. Design support:

Offer design support and engineering solutions.

Collaborate with customers to provide customized design assistance and consulting services. Provide engineer training and access to technical resources.

Manufacturer related products

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  • EPC
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  • ROHM Semiconductor
    MOSFET 2N-CH 1200V 300A
  • Toshiba Electronic Devices and Storage Corporation
    MOSFET 2 N-CHANNEL 20V 250MA US6
  • Diodes Incorporated
    MOSFET N/P-CH 20V SOT26

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