TPH3208LDG

Mfr.Part #
TPH3208LDG
Manufacturer
Transphorm
Package/Case
-
Datasheet
Download
Description
GANFET N-CH 650V 20A 3PQFN
Stock
153

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Manufacturer :
Transphorm
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
14 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds :
760 pF @ 400 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
3-PowerDFN
Power Dissipation (Max) :
96W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
130mOhm @ 13A, 8V
Supplier Device Package :
3-PQFN (8x8)
Technology :
GaNFET (Gallium Nitride)
Vgs (Max) :
±18V
Vgs(th) (Max) @ Id :
2.6V @ 300µA
Datasheets
TPH3208LDG

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Flexible logistics solutions, including express, air, and sea freight. Strong partnerships with reliable suppliers for a stable supply chain. Design support:

Offer design support and engineering solutions.

Collaborate with customers to provide customized design assistance and consulting services. Provide engineer training and access to technical resources.

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