IV1Q12160T4

Mfr.Part #
IV1Q12160T4
Manufacturer
Inventchip Technology
Package/Case
-
Datasheet
Download
Description
SIC MOSFET, 1200V 160MOHM, TO-24
Stock
106

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Manufacturer :
Inventchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
20A (Tc)
Drain to Source Voltage (Vdss) :
1200 V
Drive Voltage (Max Rds On, Min Rds On) :
20V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
43 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds :
885 pF @ 800 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 175°C (TJ)
Package / Case :
TO-247-4
Power Dissipation (Max) :
138W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
195mOhm @ 10A, 20V
Supplier Device Package :
TO-247-4
Technology :
SiCFET (Silicon Carbide)
Vgs (Max) :
+20V, -5V
Vgs(th) (Max) @ Id :
2.9V @ 1.9mA
Datasheets
IV1Q12160T4

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Flexible logistics solutions, including express, air, and sea freight. Strong partnerships with reliable suppliers for a stable supply chain. Design support:

Offer design support and engineering solutions.

Collaborate with customers to provide customized design assistance and consulting services. Provide engineer training and access to technical resources.

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