SQ2301ES-T1_GE3

Mfr.Part #
SQ2301ES-T1_GE3
Manufacturer
Vishay
Package/Case
-
Datasheet
Download
Description
MOSFET P-CH 20V 3.9A TO236
Stock
35000

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
3.9A (Tc)
Drain to Source Voltage (Vdss) :
20 V
Drive Voltage (Max Rds On, Min Rds On) :
2.5V, 4.5V
FET Feature :
-
FET Type :
P-Channel
Gate Charge (Qg) (Max) @ Vgs :
8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds :
425 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C ~ 175°C (TA)
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max) :
3W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
120mOhm @ 2.8A, 4.5V
Supplier Device Package :
TO-236 (SOT-23)
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±8V
Vgs(th) (Max) @ Id :
1.5V @ 250µA
Datasheets
SQ2301ES-T1_GE3

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