SCTW100N65G2AG

Mfr.Part #
SCTW100N65G2AG
Manufacturer
STMicroelectronics
Package/Case
-
Datasheet
Download
Description
SICFET N-CH 650V 100A HIP247
Stock
35000

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
18V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
162 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds :
3315 pF @ 520 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 200°C (TJ)
Package / Case :
TO-247-3
Power Dissipation (Max) :
420W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
26mOhm @ 50A, 18V
Supplier Device Package :
HiP247™
Technology :
SiCFET (Silicon Carbide)
Vgs (Max) :
+22V, -10V
Vgs(th) (Max) @ Id :
5V @ 5mA
Datasheets
SCTW100N65G2AG

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