SCTL90N65G2V

Mfr.Part #: SCTL90N65G2V

Manufacturer: STMicroelectronics

Package/Case: -

Datasheet: Download

Description: SILICON CARBIDE POWER MOSFET 650

Stock: 35000

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Manufacturer :: STMicroelectronics

Product Category :: Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :: 40A (Tc)

Drain to Source Voltage (Vdss) :: 650 V

Drive Voltage (Max Rds On, Min Rds On) :: 18V

FET Feature :: -

FET Type :: N-Channel

Gate Charge (Qg) (Max) @ Vgs :: 157 nC @ 18 V

Input Capacitance (Ciss) (Max) @ Vds :: 3380 pF @ 400 V

Mounting Type :: Surface Mount

Operating Temperature :: -55°C ~ 175°C (TJ)

Package / Case :: 8-PowerVDFN

Power Dissipation (Max) :: 935W (Tc)

Product Status :: Active

Rds On (Max) @ Id, Vgs :: 24mOhm @ 40A, 18V

Supplier Device Package :: PowerFlat™ (8x8) HV

Technology :: SiCFET (Silicon Carbide)

Vgs (Max) :: +22V, -10V

Vgs(th) (Max) @ Id :: 5V @ 1mA

Datasheets: SCTL90N65G2V

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