R8010ANX

Mfr.Part #
R8010ANX
Manufacturer
ROHM Semiconductor
Package/Case
-
Datasheet
Download
Description
MOSFET N-CH 800V 10A TO220FM
Stock
35000

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
10A (Tc)
Drain to Source Voltage (Vdss) :
800 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
1750 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-220-3 Full Pack
Power Dissipation (Max) :
40W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
560mOhm @ 5A, 10V
Supplier Device Package :
TO-220FM
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±30V
Vgs(th) (Max) @ Id :
5V @ 1mA
Datasheets
R8010ANX

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Flexible logistics solutions, including express, air, and sea freight. Strong partnerships with reliable suppliers for a stable supply chain. Design support:

Offer design support and engineering solutions.

Collaborate with customers to provide customized design assistance and consulting services. Provide engineer training and access to technical resources.

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