G30N02T
- Mfr.Part #
- G30N02T
- Manufacturer
- Goford Semiconductor
- Package/Case
- -
- Datasheet
- Download
- Description
- N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.
- Stock
- 74
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- Manufacturer :
- Goford Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 30A (Ta)
- Drain to Source Voltage (Vdss) :
- 20 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 15 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 900 pF @ 10 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 40W (Ta)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 13mOhm @ 20A, 4.5V
- Supplier Device Package :
- TO-220
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±12V
- Vgs(th) (Max) @ Id :
- 1.2V @ 250µA
- Datasheets
- G30N02T
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