STI23NM60N

Mfr.Part #
STI23NM60N
Manufacturer
STMicroelectronics
Package/Case
-
Datasheet
Download
Description
MOSFET N-CH 600V 19A I2PAK
Stock
35000

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
19A (Tc)
Drain to Source Voltage (Vdss) :
600 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
2050 pF @ 50 V
Mounting Type :
Through Hole
Operating Temperature :
150°C (TJ)
Package / Case :
TO-262-3 Long Leads, I²Pak, TO-262AA
Power Dissipation (Max) :
150W (Tc)
Product Status :
Obsolete
Rds On (Max) @ Id, Vgs :
180mOhm @ 9.5A, 10V
Supplier Device Package :
I2PAK
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±25V
Vgs(th) (Max) @ Id :
4V @ 250µA
Datasheets
STI23NM60N

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