SPW24N60C3FKSA1

Производитель-деталь №
SPW24N60C3FKSA1
Производитель
Infineon Technologies
Упаковка/футляр
-
Техническое описание
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Описание
MOSFET N-CH 650V 24.3A TO247-3
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Infineon Technologies
Категория товара :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
24.3A (Tc)
Drain to Source Voltage (Vdss) :
650 V
Drive Voltage (Max Rds On, Min Rds On) :
10V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds :
3000 pF @ 25 V
Mounting Type :
Through Hole
Operating Temperature :
-55°C ~ 150°C (TJ)
Package / Case :
TO-247-3
Power Dissipation (Max) :
240W (Tc)
Product Status :
Active
Rds On (Max) @ Id, Vgs :
160mOhm @ 15.4A, 10V
Supplier Device Package :
PG-TO247-3-1
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
3.9V @ 1.2mA
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SPW24N60C3FKSA1

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Offer design support and engineering solutions.

Collaborate with customers to provide customized design assistance and consulting services. Provide engineer training and access to technical resources.

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