RYE002N05TCL

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RYE002N05TCL
Производитель
ROHM Semiconductor
Упаковка/футляр
-
Техническое описание
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Описание
MOSFET N-CH 50V 200MA EMT3
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35000

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ROHM Semiconductor
Категория товара :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
200mA (Ta)
Drain to Source Voltage (Vdss) :
50 V
Drive Voltage (Max Rds On, Min Rds On) :
0.9V, 4.5V
FET Feature :
-
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
26 pF @ 10 V
Mounting Type :
Surface Mount
Operating Temperature :
150°C (TJ)
Package / Case :
SC-75, SOT-416
Power Dissipation (Max) :
150mW (Ta)
Product Status :
Not For New Designs
Rds On (Max) @ Id, Vgs :
2.2Ohm @ 200mA, 4.5V
Supplier Device Package :
EMT3
Technology :
MOSFET (Metal Oxide)
Vgs (Max) :
±8V
Vgs(th) (Max) @ Id :
800mV @ 1mA
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RYE002N05TCL

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