Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Package / Case:
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
Supplier Device Package:
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Stock Action
IV1Q12160T4 Inventchip Technology
SIC MOSFET, 1200V 16...
RFQ
106
In-stock
Buy Now Get Quote
IV1Q12050T3 Inventchip Technology
SIC MOSFET, 1200V 50...
RFQ
54
In-stock
Buy Now Get Quote
IV1Q12050T4 Inventchip Technology
SIC MOSFET, 1200V 50...
RFQ
35,000
In-stock
Buy Now Get Quote
1 / 1 Page, 3 Records